Quantum Well InAs/AlSb/GaSb Vertical Tunnel FET With HSQ Mechanical Support
نویسندگان
چکیده
A type-III (broken gap) band alignment heterojunction vertical in-line InAs/AlSb/GaSb tunnel FET, including a 2-nmthin AlSb tunneling barrier is demonstrated. The impact of overlap and underlap gate is studied experimentally and supported further by quasi-stationary 2-D TCAD Sentaurus device simulations. Hydrogen silsesquioxane is used as a novel mechanical support structure to suspend the 10-nm-thin InAs drain with enough undercut to be able to demonstrate an overlap gate architecture. The overlap gate InAs/AlSb/GaSb TFET shows an ON current density of 22 μA/μm2 at VGS = VDS = 0.4 V and the subthreshold slope is 194 mV/decade at room temperature and 46 mV/decade at 100 K.
منابع مشابه
Band hybridization and spin-splitting in InAs/AlSb/GaSb type II and broken-gap quantum wells
We present a detailed theoretical study on the features of band hybridization and zero-field spin-splitting in InAs/AlSb/GaSb quantum wells QWs . An eight-band k ·p approach is developed to calculate the electronic subband structure in such structures. In the absence of the AlSb layer, the hybridized energy gaps can be observed at the anticrossing points between the lowest electron subband and ...
متن کاملTwo-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions
We examine room temperature band-to-band tunneling in 2D InAs/3D GaSb heterostructures. Specifically, multi-subband, gate-controlled negative differential resistance is observed in InAs/ AlSb/GaSb junctions. Due to spatial confinement in the 10 nm-thick InAs layer, tunneling contributions from two distinct subbands are observed as sharp steps in the current-voltage characteristics. It is shown ...
متن کاملOn the effect of the barrier widths in the InAs/AlSb/GaSb singlebarrier interband tunneling structures
Articles you may be interested in Proton irradiation of InAs/AlSb/GaSb resonant interband tunneling diodes Appl. Quantization effect on capacitancevoltage and currentvoltage characteristics of an InAs/AlSb/GaSb interband tunneling diode InAs/AlSb/GaSb singlebarrier interband tunneling diodes with high peaktovalley ratios at room temperature The dependence of the interband tunneling current on A...
متن کاملInterface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga0.665In0.335AsxSb1 - x/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be bl...
متن کاملHigh performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices.
We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to ...
متن کامل